Some mathematical results for impurity redistribution during the growth of a layer on a substrate
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باز توزیع ناخالصی آرسنیک (As) در رشد گرمایی و سرعت رشد اکسید سیلیسیم
In this article, we investigate the redistribution of implanted As+ ion and effect of it on the rate of oxide growth during steam oxidation of Si wafers at 900oC. Our results show that a highly enriched, thin layer of Arsenic forms at the interface between the oxide and the underlying Si. Also, the oxidation rate was found to increase depending on the depth distribution and dose of the implant...
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تاریخ انتشار 2016